过量镁掺杂的p-GaN的变温霍尔效应研究

Temperature-Dependent Hall Measurement for Heavily Mg-doped p-GaN

利用变温霍尔效应研究了过量镁掺杂p-GaN样品空穴浓度随温度变化以及迁移率与掺杂浓度的关系,指出了过量镁掺杂引起位错密度的增加是导致空穴载流子浓度随掺杂浓度增加而减少的主要原因.尽管适当增加镁的掺杂浓度可以提高样品中空穴的迁移率,但是超高的重掺杂将会导致样品中的空穴浓度和迁移率同时急剧下降.

The relationships of the hole mobility and concentration with Mg doping content have been studied systemically for the heavily doped p-GaN samples by using temperature-dependent Hall measurement. The reason for the decrease of the hole concentration with Mg doping content is attributed to the increase of dislocation density in the samples. Moderate increase of Mg doping will improve the mobility in the samples, but the hole concentration and mobility will decrease dramatically if the sample is much more heavily doped.