硅材料微/纳米级体缺陷激光无损检测的新途径

A New Laser Non-destructive Method of Detecting Micro/nano Bulk Defects in Silicon Materials

提出一种基于广义洛伦兹一米氏理论，在垂直于人射光方向接收散射光来检测硅中微／纳米级体缺陷的激光无损检测新途径，叙述了有关的理论基础和优越性，模拟实验证实了新途径的正确性与可行性。

A novel way which is based on Generalized Lorenz - Mie Scattering Theory and that can detect micro bulk defects in Si materials is developed. Its principle is analyzed and many advantages in it are put forward. Simulating experiments on glass sample is implemented and scattered graph collected in the direction vertical to the incident light is processed. Quite satisfactory result is achieved which dernonstrates that the noval way is correct and feasible.