摘要
简介了移动电话单片功率放大器的设计、制作,给出了电路拓扑和版图.该三级放大电路在800-900MHz内,小信号增益>35dB,饱和输出功率>32dBm,效率>34%。采用50mm全高于注入全平面干法工艺,均匀性、重复性好,工艺成品率高。
This paper describes the design,fabrication and test results of a GaAs MMIC power amplifier used in mobile coinmunication system. The circuit topology and layout are presented. This three-stage amplifier has small signal gain of more than 35 dB and saturated output power of more than 32 dBm with power added effi-ciency more than 34% in frequency range of 800-900 MHz. A satisfying yield on 50 mm GaAs wafers was obtained due to the high uniformity and reproducibility of the fabrication technology.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1997年第1期3-6,共4页
Research & Progress of SSE
关键词
砷化镓
单片电路
功率放大器
移动通信
GaAs
Monolithic Circuit
Power Amplifier
Mobile Communication