摘要
从理论上分析了影响晶体管发射极一集电极击穿后负阻摆幅的因素，通过SUPREM-Ⅲ分别模拟镓管和镓硼管的杂质浓度分布，得到了镓硼管低负阻摆幅和镓管低的电流增益原因。
The emitter-collector negative resistance of transistor is analyzed theoretically,with the simulation of doping distribution for gallium-born transistor and gallium transistor by SUPREM-Ⅲ, the reasons are obtained for the less nega-tive resistance of gallium-born transistor and the lower current gain of gallium tran-sistor.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1997年第1期15-20,共6页
Research & Progress of SSE
关键词
负阻
功率器件
理论分析
功率晶体管
Negative Resistance
Power Device
Theoretical Analysis
