3C-SiC功率肖特基二极管特性的计算机分析

Computer Analyses of 3C-SiC Schottky Barrier Diode Characteristics

由描述功率肖特基二极管电学特性的基本方程出发，结合对典型整流电路效率、器件正向压降、反向耐压及温度特性等参数的数值分析，给出3C－SiC功率肖特基二极管折衷优化设计的理论依据。

Starting with fundamental equation that discribes the electrical be-havior of 3C-SiC power Schottky barrier diode,the theoretical analyses of the recti-fying efficiency in AC-DC convert operation,the characteristics of forward conduc-tion,reverse blocking and operating temperature are derived. Finally,the theoretical basis of power 3C-SiC Schottky barrier diode optimum design is given.