氢化非晶硅场效应晶体管的特性研究

The Study of Characteristics of Hydrogenated Amorphous Silicon Field Effect Transistor

氢化非晶硅场效应晶体管的特性对环境因素较为敏感，如光照、温度和湿度等。文中介绍光照和退火引起的氢化非晶硅场效应晶体官场效应特性的变化，并探讨导致这种变化的原因。

The characteristics of hydrogenated amorphous silicon field effect transistor are easily affected by environmental factors (e. g. lighting, temperature and moisture). This paper presents the inflnence of lighting and annealling on char-acteristics of hydrogenated amorphous silicon field effect transistor,and discusses the reasons of this phenomenon.