大注入下多晶硅发射极晶体管特性的一维模拟

One Dimensional Simulation of Polysilicon Emitter Transistors under High-level Injection

利用Yih－FenyChyan等的PET大注入模型，并考虑了发射极串联电阻RTE和多晶硅／硅界面氧化层延迟时间τox对器件特性的影响，编制了程序。结合实例模拟了在大注入下具有发射区、基区指数掺杂分布的PET的电流增益和频率特性（fT人和fmax）。模拟结果表明，RCA器件（发射区的多晶硅／硅界面氧化层厚度δ=1．4um）的β值高于HF器件（δ=0），但HF器件的fTmax值高于RCA器件。

In this paper,with considering the effects of the emitter series resis-tance R_TE and the delay time τox of the poly-Si/Si interfacial oxide layer,a calculating program for high-level injection model of PET has been made by using the Yih-Feng Chyan et al's model. The current gain and frequency response(fT and fmax)of PET with exponential doping profile in emitter and base under high-level injection have been simulated by taking the measured data of studied device as the input pa-rameters. The simulated results indicate that the value of β of RCA device is higher than that of HF device,but the value of fTmax. of HF device is higher than that of RCA device.