摘要
本文综述了MOSFET栅介质的最新研究状况。介绍了Ta2O5高k薄膜材料作为MOSFET栅氧化物在现阶段主要的制备技术和进展。电学性能是今后研究应关注的主要方面。最后展望了其在MOSFET绝缘栅的研究前景。
The new research of MOSFET-gate dielectric was summarized.Main preparation technology and progress of high dielectric constant （high-k） tantalum oxide films as MOSFET- gate oxide were introduced,And what＇s more,the electricity characteristics should pay close attention to.Finally,the development perspective of tantalum oxide was previewed.
出处
《电子质量》
2007年第4期1-3,共3页
Electronics Quality
关键词
微电子技术
MOSFET栅介质
五氧化二钽
高K
电学特性
Microelectronic technology
MOSFET-gate dielectric
Tantalum oxide（Ta2O5）
High-k
Electricity characteristics
