InAs单层和亚单层结构中的自旋动力学研究

Spin relaxation dynamics in InAs monolayer and submonolayer

利用偏振时间分辨光谱和时间分辨Kerr旋转谱,研究了GaAs中的InAs单层和亚单层的电子自旋动力学.实验发现,在非共振激发条件下,厚度为1/3单层的InAs亚单层中电子自旋弛豫寿命长达3.4ns,而1个单层厚的InAs层的电子自旋寿命只有0.48ns;而在共振激发条件下,亚单层结构中的电子自旋寿命大大减少,只有70ps,单层InAs中电子自旋寿命没有显著变化.分析表明,低温下InAs单层和亚单层结构中,Bir-Aronov-Pikus(BAP)自旋弛豫机理占主导地位.通过改变材料结构特性和激发条件来改变电子空穴的空间相关性,从而达到控制自旋弛豫的目的.

By using time-resolved photoluminescence and time-resolved Kerr rotation, we have studied the unique electron spin dynamics in InAs monolayer （ML） and submonolayer （ SML）, which were sandwiched in GaAs matrix. Under non-resonant excitation, the spin relaxation lifetimes of 3.4 ns and 0.48 ns were observed for 1/3 ML and 1 ML InAs samples, respectively. More interestingly, the spin lifetime of the 1/3 ML InAs decreased dramatically under resonant excitation, down to 70 ps, while the spin lifetime of the 1 ML sample did not vary much, changing only from 400 to 340 ps. These interesting results come from the different electron-hole interactions caused by different spatial electron-hole correlation, and they provide a direct evidence of the dominant spin relaxation process, i.e. the BAP mechanism. Furthermore, these new results may provide a valuable enlightenment in controlling the spin relaxation and in seeking new material systems for spintronics application.