混合电路贮存可靠性及评价方法

Storage Reliability and Evaluation Methods for Hybrid IC's

系统地分析和总结了混合电路在贮存中的失效模式及机理,温度、湿度以及化学等导致贮存失效的主要因素,论述了缺陷消除或控制法、贮存寿命加速试验法、标准单元结构评估预计法、自然贮存试验法等评价贮存可靠性的方法,为评估/评价混合电路贮存可靠性提供了思路和参考。

Failure modes and mechanisms for storage of hybrid IC＇s are systematically analyzed and summarized. Temperature, humidity and chemical factors are the major causes leading to HIC storage failures. Generally, most of the failures are adherence （chip/parts）, bonding, package and other non-wearout storage failures due to the process or design defects. Furthermore, evaluation methods for storage reliability, such as defects avoid/control, storage life cycle accelerated testing, evaluation/prediction for standard unit construct, natural storage testing, are also discussed. All these methods provide a way to evaluate and assess the reliability of HICks in storage.