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SiGe HBT器件的可靠性技术 被引量：1

Reliability Technology for SiGe HBT's
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摘要 介绍了SiGe异质结双极晶体管的特点,对SiGe异质结双极晶体管的物理机理进行了讨论,进而分析了影响其可靠性的各种可能因素,总结了目前SiGe HBT可靠性加速寿命试验方法,并进行了比较。 Characteristics of SiGe heterojunction bipolar transistors （HBT） are summarized. Physical mechanisms of SiGe HBT＇s are discussed, and potential factors to affect SiGe HBT＇s reliability are described in detail. Finally, methods for reliability accelerated life test of SiGe HBT＇s are summarized and a comparison is made between these techniques.
作者 林晓玲 孔学东 姚若河 恩云飞 章晓文
机构地区 华南理工大学物理科学与技术学院 信息产业部电子第五研究所 电子元器件可靠性物理及其应用技术国家级重点实验室 信息产业部电子第五研究所
出处 《微电子学》 CAS CSCD 北大核心 2007年第2期210-213,共4页 Microelectronics
基金 模拟集成电路国家重点实验室基金资助项目(51439030105DZ1504)
关键词 SIGE 异质结双极晶体管 加速寿命试验 可靠性 REID热载流子效应 SiGe Heteroiunction bipolar transistor Accelerated life test Reliability Recombination enhanced impurity diffusion Hot carrier effect
分类号 TN306 [电子电信—物理电子学]
  • 相关文献

参考文献9

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共引文献7

同被引文献12

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引证文献1

微电子学
2007年 第2期

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