UHF RFID阅读器中的堆叠式CMOS LNA设计

A Stack-Style CMOS LNA for UHF RFID Reader

提出了一种基于0.25μm标准CMOS工艺,可用于UHF RFID(超高频射频识别)阅读器前端的低噪声放大器。根据低噪声放大器的匹配、噪声和增益分析,结合射频识别系统的理论计算,提出堆叠器件的电路结构达到电流复用,以降低功耗并保证增益。测试结果表明,在2.5 V供电时,放大器可以提供约26.3 dB的前向增益,噪声系数约为1.9 dB,放大电路从电源电压上抽取5.8 mA左右的工作电流,反向隔离度达到-40 dB,放大器的IIP3约为-15 dBm。

A 900 MHz LNA for UHF RFID （Ultra High Frequency Radio Frequency Identification） systems implemented in SMIC＇s 0. 25 μm standard CMOS process is proposed. The circuitry of the LNA is discussed based on the features of the RFID application. This low noise amplifier provides a forward gain of 26. 3 dB with a noise figure of only 1.9 dB while drawing about 5.8 mA current from 2.5 V supply voltage. The stack-style structure, which reuses the bias current, guarantees low power dissipation （about 14. 5 mW） and high reverse isolation of about -40 dB. This LNA achieves IIP3 of -15 dBm and 1-dB compression of -25 dBm.