非单晶硅基薄膜光致发光特性的研究

Study on luminescent property of non-crystalline silicon based films

非单晶硅氢基薄膜材料，经高温退火及高温氧化可制备纳米尺寸的晶粒，室温下发出可见光。发光强度强烈依赖于晶粒大小和结晶体在网络中的体积比。发光来源于量子尺寸效应和表面发光中心。

The nanometer crystalline silicon grains prepared from non-monocrystalline silicon based films through the processes of high temperature annealing and high temperature oxidation can emit visible light at room temperatures. It has been found that the photoluminescence (PL) intensity depends strongly on the grain size and the ratio of volume faction of crystallization in the film. The PL originates from the quantum size effects and the luminescent centres at the surface of nanoscale grains.