氢化非晶硅薄膜光吸收谱的恒定光电流测量法

Measurement of optical absorption coefficientby CPM in a-Si:H

本文报道了光吸收谱的恒定光电流（ＣｏｎｓｔａｎｔＰｈｏｔｏｃｕｒｒｅｎｔＭｅｔｈｏｄ）测量法，并用其测量了高速沉积的氢化非晶硅薄膜（ａ－Ｓｉ：Ｈ）的光吸收谱，同时观测了ＳｔａｅｂｌｅｒＷｒｏｎｓｋｉ（ＳＷ）效应中样品吸收系数的变化。

In this paper , constant photocurrent method (CPM ) has been used to deter- mine the optical absorption coefficient a (E) of hydrogenated amorphous sillicon (a-Si : H) films fabricated at high deposition rate. CPM measurements were further extended to characterise Staebler-Wronski effect for observation of the changes in absorption coeffi- cient in our a-Si : H samples.