摘要
本文研究了ａ－Ｓｉ／Ｔｉ叠层膜在１８０℃温度下的互扩散，利用ＸＰＳ分析发现Ｔｉ、Ｓｉ原子具有相等的原子浓度，生成物为ＴｉＳｉ；利用ＵＳ／ＶＩＳ分光光度计测试了生成物的透过率，发现其透过率在紫外较ＩＴＯ膜提高，测量了ａ－Ｓｉ／Ｔｉ界面特性近似为欧姆接触。该生成物可作为一种光电薄膜。
Mutual diffusion of a-Si/Ti layers studied at 180C by using XPS analysis has indicated that the atomic concentration of Ti and that of Si is almost equal and the prod- uct obtained is TiSi. US/VIS spectrophotometer of the product film has showed that it has a higher transmissivity than an ITO film in ultra violet region. Upon characteristics test , a-Si/Ti interface has been found to approximate an ohmic contact. It is concluded that the product film can be used as a photoelectric film.
出处
《汕头大学学报（自然科学版）》
1997年第1期92-94,共3页
Journal of Shantou University：Natural Science Edition
关键词
互扩散
光电特性
硅
钛
叠层膜
界面
mutual difussion : XPS analysis : photoelectric characteristic
