非晶态SrTiO_3薄膜的快速晶化处理

Rapid crystallization of amorphous SrTiO_3 thin film

在Si(111)基片上采用脉冲激光沉积(PLD)方法,烘烤温度300℃,制备得到非晶态SrTiO3薄膜。采用快速晶化处理,将非晶态SrTiO3薄膜在不同温度、不同晶化处理时间下进行了晶化处理,采用GIXRD和AFM分析检验晶化的效果和表面形貌。结果表明,SrTiO3晶化程度强烈依赖处理温度,处理温度越高,晶化程度越高;在同一温度下,增加处理时间有助于提高晶化效果,并获得致密、表面平整、均匀的SrTiO3晶态薄膜;晶粒大小不随晶化处理时间明显变化。在快速晶化处理过程中,非晶态SrTiO3薄膜在极短时间内达到晶化温度,并形成大量晶核,从而使晶粒生长受到限制,有利于获得更好的晶化效果。

The amorphous SrTiO3 （STO） thin film prepared on Si（111） substrates by pulsed laser deposition （PLD） were crystallized by annealing at different temperatures for various annealing time. Grazing incidence X-ray diffraction（GIXRD） and atomic force microscopy（AFM） were applied to investigate the crystallinity and surface morphology of the annealed STO thin films. The results show that the formation of STO crystalline phase strongly depends on the annealing temperature, and the increase of annealing temperature leads to an improvement in the crystalline quality. The crystalline quality and surface morphology can be improved and no significant grain growth is observed with increasing annealing time at a given annealing temperature. In rapid crystallization process, numerous nuclei form in a very short time, and then the followed grain growth is limited with increasing annealing time.