SiO_2上多晶GeSi再结晶性质的研究

Recrystallization Properties of Polycrystalline GeSi on SiO_2

本文发展了一种SiO2上多晶GeSi再结晶的方法，研究了其再结晶性质．由RRH／VLP－CVD系统在SiO2上生长的性能优良的多晶GeSi材料，经能量为180keV，剂量为2×1014cm-2的Si+离子注入非晶化处理后，形成具有一定损伤分布的非晶层．由此，我们系统研究了多晶GeSi非晶化后的再结晶性质，认为Ge在再结晶过程中可能起了的诱导晶化作用；首次观察到GeSi晶粒的纵向生长行为；得到的GeSi晶粒大于同样条件下得到的多晶Si晶粒．本项研究为多晶GeSi在高速TFT器件及其它高速器件中的应用奠定了基础，并为制备GeSi量子线结构提供了一条可能的途径．

We have developed a new way to recrystallize poly-GeSi on SiO2. 180keV-Si+ion implantation with dose 2×1014cm-2 is used to amorphize the high quality poly-GeSi grown by RRH/VLP-CVD on SiO2. An amorphized region with damage distribution is formed, so we can systematically study the recrystallization properties of amorphized GeSi thin film. The results revealed the inducement of Ge in the recrystallization process. For the first time, we have observed the longitudinal recrystallization pattern of GeSi grains. After the recrystallization, the final GeSi grain sizes are greater than the poly-Si grain sizes in the same conditions.