摘要
本文在国内首次报道了LP－MOVPE法生长高质量的压、张应变交替InGaAsP多量子阶结构的研制过程及其材料的高精度X射线双晶摇摆衍射曲线和光致发光谱特性表征．在此材料基础之上制作的平面掩埋条形结构激光器经过双腔面镀增透射膜后，其TE模与TM模自发发射谱光强差为3dBm，呈现偏振补偿特性．
High quality 1. 3μm InGaAsP/InP gain medium with tensile and compressive strained multi-quanturn wells grown by Low Pressure Metalorganic Chemical Vapor Deposition(LP-MOCVD) is reported. The Anti-Reflection film coated PBH laser based on this structure is found that the power difference of transverse electric(TE) and transverse magnetic(TM) spontaneous emissions is only 3dB which indictes to have approximate gain in both TE and TM modes.
关键词
LP-MOVPE生长
材料
半导体
多量子阱结构
Metallorganic vapor phase epitaxy
Semiconducting films
Semiconducting indium compounds
Semiconductor quantum wells
Strain
