摘要
在衬底表面制作超晶格缓冲层可以有效地掩埋体材料的缺陷,使阈值电流大幅度降低,光功率成倍增长。所研制出的量子阱激光器室温脉冲平均线性光功率大于20mW(未镀反射膜),波长为778nm,最低阈值电流为30mA,阈值电流密度为400~600A/cm2,谱线宽度为5nm。
To bury the substrate defects effectivel, the superlattice buffer layers are fabricated on the surface of the substrate, and a good interface can be gotten. It decreases the threshold current and increases the output power greatly. The quantum well lasers that we fabricated can be operated at room temperature, the wavelength is 778nm and the lowest threshold current at room temperature (CW) is 30 mA, the threshold current density is about 400~600 A/cm 2, the linear output power with uncoated facets is greater than 20 mW, and the width of the spectral line is 5 nm.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1997年第2期97-99,共3页
Chinese Journal of Lasers
基金
山东省科委资助
关键词
超晶格
量子阱
半导体激光器
superlattice, quantum well, semiconductor lasers