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Study of CMOS integrated signal processing circuit in capacitive sensors 被引量:1

Study of CMOS integrated signal processing circuit in capacitive sensors
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摘要 A CMOS integrated signal processing circuit based on capacitance resonance principle whose structure is simple in capacitive sensors is designed. The waveform of output voltage is improved by choosing bootstrap reference current mirror with initiate circuit, CMOS analogy switch and positive feedback of double-stage inverter in the circuit. Output voltage of this circuit is a symmetric square wave signal. The variation of sensitive capacitance, which is part of the capacitive sensors, can be denoted by the change of output vohage's frequency. The whole circuit is designed with 1.5 μm P-weU CMOS process and simulated by PSpice software. Output frequency varies from 261.05 kHz to 47. 93 kHz if capacitance varies in the range of 1PF - 15PF. And the variation of frequency can be easily detected using counter or SCU. A CMOS integrated signal processing circuit based on capacitance resonance principle whose structure is simple in capacitive sensors is designed. The waveform of output voltage is improved by choosing bootstrap reference current mirror with initiate circuit, CMOS analogy switch and positive feedback of double-stage inverter in the circuit. Output voltage of this circuit is a symmetric square wave signal. The variation of sensitive capacitance, which is part of the capacitive sensors, can be denoted by the change of output voltage’s frequency. The whole circuit is designed with 1.5 μm P-well CMOS process and simulated by PSpice software. Output frequency varies from 261.05 kHz to 47.93 kHz if capacitance varies in the range of 1PF~15PF. And the variation of frequency can be easily detected using counter or SCU.
出处 《Journal of Harbin Institute of Technology(New Series)》 EI CAS 2007年第2期224-228,共5页 哈尔滨工业大学学报(英文版)
关键词 CMOS integrated Signal processing PSPICE Schmitt trigger 电容性传感器 CMOS 集成电路 信号处理
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