双掺杂透明导电氧化物纳米线的制备与发光性能

Synthesis and optical properties of quaternary oxide Ga_2O_3(ISGO) nanowires co-doped with In and Sn

文章以金属镓(Ga)、铟(In)和氧化亚锡(SnO)粉末作为前驱反应物,通过简单的热蒸方法成功制备出双掺杂的氧化物ISGO(掺杂了In、Sn的Ga2O3)纳米线。样品的形貌、结构与成分的测定分别在场发射扫描电镜、X射线衍射谱仪、选区电子衍射、高分辨透射电镜以及X射线能量散射谱仪上进行,结果表明已合成的纳米线为掺杂In和Sn具有单斜晶结构的-βGa2O3;还提出了用自催化气-液-固(VLS)生长机制来解释双掺杂氧化物ISGO纳米线的生长;提出了由于Sn和In成分的双掺杂,使得其发光峰的峰位明显红移、半高宽变宽。

Uniform co-doped oxide ISGO nanowires are successfully synthesized by the simple thermal evaporation method using Ga and In metals and SnO powder as the sources. The morphology and microstructure of the as-prepared nanowires have been extensively investigated using field-emission scanning electron microscopy, X-ray powder diffraction, energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy and selected-area electron diffraction（SAED）. The results indicate that synthesized products are single-crystalline with monoclinic β-Ga2O3 structure doped with In and Sn. A self-catalytic vapor-liquid-solid mechanism is proposed for interpreting the growth of codoped oxide ISGO nanowires. Due to the heavy doping of In and Sn, the emission peak in photoluminescence spectra have red-shifted and broadened seriously.