SOI材料的缺陷及其表征

Defects in SOI Materials and Related Characterization

简述了利用注氧隔离法(SIMOX)制备的SOI材料中产生的一些不同于体硅材料的特殊缺陷,涉及表面缺陷、Si/SiO2界面缺陷和埋氧层缺陷,包括这些缺陷的产生机制、表征方法以及一些降低和消除措施。

The peculiar defects in silicon on insulator （SOI） material separated by implant oxygen （SIMOX） are described,such as surface defects, Si/SiO2 interface defects and some defects in buried oxide. The formation mechanism and characterization of these defects are addressed. Moreover, the countermeasures to reduce and eliminate the defects in SOI are also introduced.