摘要
采用反应磁控溅射工艺分别制备掺杂Ti、Mo、Ni、V的WOx薄膜,研究了掺杂对其电致变色性能的影响机理。实验结果表明,适量的掺杂可以提高薄膜的电致变色性能,Mo的掺杂可以调节光谱吸收范围,Ni、V的掺杂可以提高记忆存储能力,Ti的掺杂可以延长循环寿命;磁控溅射制备的掺杂WOx薄膜均为非晶态。
WOx films doped with Ti (Mo, Ni, V) are deposited on ITO glass substrates by reactive magnetron sputtering. Their electrochromic properties and influence mechanism are studied. Experiment results demonstrate that in a certain doping range , WOx films doped with Ti (Mo, Ni, V) would improve the electrochromic performances. The spectrum could be widened by Mo-doping. The ability of color storage could be improved by Ni or V doping and the cyclic life span could be longer by Ti doping. WOx films after doping are still in amorphous state.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2007年第4期144-146,154,共4页
Materials Reports
基金
重庆市科委攻关项目(2000-6214)
关键词
WOx
薄膜
电致变色
掺杂
磁控溅射
tungsten-oxide, electrochromism, doping, magnetron sputtering