新型光刻技术的现状与进展

Current Status and Development of Emerging Photoetching Technology

大尺寸、细线宽、高精度、高效率、低成本成为IC产品发展的趋势,随着集成度的提高,芯片制造中最关键的制造工艺——光刻技术也面临着愈来愈多的难题。新兴的193nm浸入式技术、157nm极短紫外光刻(EUV)、电子束投影光刻(EPL)、纳米压印光刻等技术将是解决这些问题的关键。介绍了193nm浸入式技术、157nm光刻技术、电子束投影(EPL)光刻技术以及纳米压印光刻技术。指出纳米压印光刻技术具有生产效率高、成本低、工艺过程简单等优点,能实现分辨率达5nm以下的水平,是最具发展前途的下一代光刻技术之一。

Greater size, thinner line width, higher accuracy, higher efficiency and lower cost become the tendency of IC product development. Along with integration rate enhancement, the photoetching technology of the most essential manufacture craft in chip manufacture is facing increasingly difficult problems. The 193 nm immersion lithography technology, the 157 nm EUV lithography, the EPL lithography and nanolithography are the key to solue these questions. It＇s pointed out that nanolithography has the obvious merits of high efficiency, low lost and simple process, and it can realize resolution being under the lovel of 5nm. Nanolirhograply is one of the most promising next generation photoetching technologies.