摘要
报道了一种自对准T形电极结构的硅脉冲功率晶体管的实验结果.在2GXz短脉冲工作条件下,该晶体管输出功率70W,增益8.5dB,集电极效率50%.
This paper presents the experimental results of a silicon pulsed power transistor with self-aligned T-shaped electrode structure. The transistor produces 70 Watts of output power with 8.5dB of gain and 50 % collector efficiency at 2GHz, for short pulse operation.
出处
《电子器件》
CAS
1997年第1期1-5,共5页
Chinese Journal of Electron Devices
关键词
功率晶体管
双极晶体管
多晶硅
离子注入
power Transistor, Bipolar Transistor, Polysilicon, Ion Implantation
