3.1～3.4GHz 28W硅脉冲大功率晶体管的研制

3. 1～3. 4GHz 28W Silicon Pulsed High Power Transistor

本文介绍采用网状发射极结构、浓硼扩散发射极镇流电阻、输入、输出内匹配等技术研制出的硅微波脉冲大功率晶体管,该器件在3.1～3.4GXz的雷达频带内,脉冲输出功率28W、增益7.5dB、效率30%(脉宽100s,占空比10%).

In this paper, a kind of silicon microwave pulsed high power transistor is intro-duced. The mesh geometry of emitter and emitter diffused resistor ballasing by heavy doping borron, as well as internal input and output matching networks are used in design. The transistor we have developed provide an output power of 28W with 7. 5dB power gain and 30% collector efficiency under pulsed operation (pulse width 100μs at 10% duty) across the 3.1 to 3. 4GHz radar band.