摘要
本文简要介绍了GaInP/GaAsHBT的发展现状,用湿法工艺制作了自对准GaInP/GaAsHBT,其电流截止频率高达50GHz,性能优于我们在同等工艺条件下制作的AlGaAs/GaAsHBP.
The rapid development of GaInP/GaAs HBT (Heterojunction Bipolar Transitor) is reported briefly here. The Self-aligned NPN HBT is fabricated using wet prccers. its current cut =off frequency is as high as 50GHz. The performance is better than that of the AIGaAs/GaAs HBT we have made.
出处
《电子器件》
CAS
1997年第1期20-23,共4页
Chinese Journal of Electron Devices
