GaAs超高速门阵列集成电路Se离子注入技术研究

Se Ion Implantation for GaAs Very High Speed Gate Array

采用室温下Se+离子注入半绝缘GaAs衬底,通过优化注入能量、剂量、注入角度及快速热退火温度、时间,获得了高剂量(1×1013cm-2、200Kev)下杂质激活率大于74%,注入层平均载流子浓度为(5—6)×1017-cm-2,平均载流子迁移率为3010cm2/v.s,载流子浓度分布陡峭的优质离子注入薄层,成功地研制出了3000门GaAs超高速门阵列集成电路.

Sa+-implanted GaAs substrates were performed at roon temperature. We investigated the effects of the incidentenergy, the ion dose and the incident angle. The rapid thermal an-nealing (RTA) temperature and the duration time were also studied. Then all these diameters were uptimized. Using the Se+ - implantation at the dose of 1×1013cm-2m we got the n+-type thin layers oil GaAs substrates. The carrier mobility was 3010cm2/v. s. The dopant activity is greater than 74%. The Se+- implanted GaAs substrates were successfully used in the fsbrication of 3000 gates GaAs gate array.