摘要
High-power ridge-waveguide tapered InGaAs-AlGaAs lasers emitting at 980nm were fabricated. Lasers with a total length L = 1850μm and different lengths of the ridge waveguide Lrw were processed to study the influence of the straight section on the spatial mode filtering. When Lrw is 450μm, the devices have the optimized maxi- mum output power and beam quality,and the output power P is 4. 28W. The beam propagation ratio M2 is 3. 79 at 1W.
利用MOCVD生长980nm InGaAs-AlGaAs渐变折射率分别限制异质结单量子阱激光器外延片,采用锥形增益区脊形波导结构制备器件.保持总腔长1850μm不变,改变脊形区的长度分别为450,700和950μm,对比三种情况的P-I特性和光束质量.发现LRW=450μm时,器件特性参数和远场光束质量最优,斜率效率达0·83W/A,饱和功率为4·28W.输出功率为1W时,远场发散角为7·5°×30·6°,M2因子为3·79.
