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Ag掺杂ZnO的第一性原理计算 被引量:7

First-Principles Calculation of ZnO Doped with Ag
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摘要 采用基于密度泛函理论的第一性原理赝势法对Ag掺杂ZnO的几何结构、杂质形成能和电子结构进行了比较系统的研究.研究表明,掺Ag导致晶格膨胀;在ZnO晶格中,杂质Ag最可能以替代Zn位出现,此时将形成一个深受主能级.文中的计算结果与其他研究者的实验结果相吻合. A method using first principles and pseudopotentials based on density functional theory is applied to calculate the geometric structure,the formation energy of impurities,and the electronic structure of ZnO doped with Ag. The calculations indicate that ZnO doped with Ag expands. Furthermore, Ag dopants prefer to occupy the substitutional Zn sites, and an Ag substitution at a Zn site behaves as a deep acceptor. Our results are in good agreement with other calculated and experimental results.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第5期696-700,共5页 半导体学报(英文版)
基金 国家高技术研究发展计划(批准号:2003AA302160) 电子信息产业发展基金(批准号:2004125)资助项目~~
关键词 ZNO AG 第一性原理 电子结构 ZnO Ag first principles electronic structure
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参考文献20

  • 1Tang Z K,Wang G K L,Yu P,et al. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films.Appl Phys Lett,1998,72(25) :3270
  • 2Chen Y,Tuan N T,Segawa Y,et al. Stimulated emission and optical gain in ZnO epilayers grown by plasma-assisted molecular-beam epitaxy with buffers. Appl Phys Lett, 2001,78 1469
  • 3Kang H S,Ahn B D,Kim J H,et al. Structural,electrical,and optical properties of p-type ZnO thin films with Ag dopant. Appl Phys Lett,2006,88:202108
  • 4Li Duan, Lin Binxia,Zhang Weiying,et al. Enhancement of ultraviolet emissions from ZnO films by Ag doping. Appl Phys Lett,2006,88:232110
  • 5Zhao Songqing,Zhou Yueliang,Zhao Kun,et al. Violet luminescence emitted from Ag-nanocluster doped ZnO thin films grown on fused quartz substrates by pulsed laser deposition. Physica B, 2006,373 : 154
  • 6Jeong S H,Park B N,Lee S B,et al. Structure and optical properties of silver-doped zinc oxide sputtered films. Surface & Coating Technology, 2005,193 : 340
  • 7Kanai Y. Admittance spectroscopy of ZnO crystals containing Ag. Jpn J Appl Phys, 1991,30 (9A) : 2021
  • 8Gruzintsev A N,Volkov V T,Khodos I I,et al. Luminescent properties of ZnO films doped with group-IB acceptors. Thin Films,2002,31(3) :234
  • 9Kresse G, Hafner J. Ab initio molecular dynamics for liquid metal. Phys Rev B,1993,47:558
  • 10Kresse G, Furthmuller J. Efficient iterative schemes for ab initio total-energy calculation using a plane-wave basis set. Phys Rev B,1996,54:11169

二级参考文献12

  • 1戴江南,王立,方文卿,蒲勇,江风益.ZnO/GaN/Al_2O_3的X射线双晶衍射研究[J].功能材料与器件学报,2004,10(4):427-431. 被引量:3
  • 2温战华,王立,方文卿,蒲勇,罗小平,郑畅达,戴江南,江风益.退火温度对ZnO薄膜结构和发光性能的影响[J].Journal of Semiconductors,2005,26(3):498-501. 被引量:10
  • 3Zhang B P,Binh N T,Wakatsuki K,et al.Low-temperature growth of ZnO epitaxial films by metal organic chemical vapor deposition.Appl Phys A,2004,78:25
  • 4Zhang B P,Wakatsuki K,Binh N T,et al.Effects of growth temperature on the characteristics of ZnO epitaxial films deposited by metalorganic chemical vapor deposition.Thin Solid Films,2004,449:12
  • 5Makino T,Yasuda T,Segawa Y,et al.Strain effects on exciton resonance energies of ZnO epitaxial layers.Appl Phys Lett,2001,79(9):1282
  • 6Heying B,Wu X H,Keller S,et al.Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films.Appl Phys Lett,1996,68 (5):643
  • 7Feng Z X,Yao S D,Hou L N,et al.Depth dependent elastic strain in ZnO epilayer:combined Rutherford backscattering/channeling and X-ray diffraction.Nucl Instrum Methods Phys Res B,2005,229:246
  • 8Fatemi M,Chaudhuri J,Mittereder J,et al.X-ray doublecrystal analysis of misorientation and strain in GaAs/Si and related heterostructures.J Appl Phys,1993,73 (3):1154
  • 9Vispute R D,Talyansky V,Choopun S,et al.Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices.Appl Phys Lett,1998,73:348
  • 10Chen Y,Bagnall D M,Koh H J,et al.Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire:growth and characterization.J Appl Phys,1998,84 (7):3912

共引文献10

同被引文献91

  • 1李新华,徐家跃.半导体ZnO单晶生长的技术进展[J].功能材料,2005,36(5):652-654. 被引量:14
  • 2苏宏波,戴江南,蒲勇,王立,李方,文卿,江风益.生长温度对ZnO薄膜性能的影响[J].Journal of Semiconductors,2006,27(7):1221-1224. 被引量:11
  • 3张富春,邓周虎,阎军锋,张志勇.ZnO电子结构与光学性质的第一性原理计算[J].光学学报,2006,26(8):1203-1209. 被引量:40
  • 4彭丽萍,徐凌,尹建武.N掺杂锐钛矿TiO_2光学性能的第一性原理研究[J].物理学报,2007,56(3):1585-1589. 被引量:23
  • 5WangZ L,Song J H.Piezoelectric nanogenerators based on zinc oxide nanowire arrays[J].Science,2006,312(5771):242-246.
  • 6Pauzauskie P J,Radenovic A,E Trepagnier,et al.Optical trapping and integration of semiconductor nanowire assemblies in water[J].Nat Mater,2006,5(2):97-101.
  • 7Tsukazaki A,Ohtomo A,Kita T,et al.Quantum hall effect in polar oxide heterostructures[J].Science,2007,315(5817):1388-1391.
  • 8Deka S,Joy P A.Synthesis and magnetic properties of Mn doped ZnO nanowires[J].Solid State Commun,2007,142(4):190-194.
  • 9Abiyasa A P,Yu S F,Lau S P,et al.Enhancement of ultraviolet lasing from Ag-coated highly disordered ZnO films by surface-plasmon resonance[J].Appl Phys Lett,2007,90(23):231106.
  • 10Corrigan T D,Guo S,Phaneuf R J,et al.Enhanced fluorescence from periodic arrays of silver nanoparticles[J].J Fluoresc,2005,15(5):777-784.

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