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激光器阵列的非本征理想因子 被引量:8

Extrinsic Ideality Factor of Laser Array
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摘要 研究了激光器阵列的电导数表征方法,建立了激光器阵列的等效电路模型,导出了理想情况下阵列的电导数公式.理论、PSPICE仿真和实验结果表明:一致性良好的阵列的非本征理想因子等于每个阵列单元的非本征理想因子,该结论可用于对阵列单元非本征理想因子检测与阵列可靠性研究.导致单元本征理想因子变大,电流泄漏的可靠性问题均可导致阵列非本征理想因子变大. An equivalent circuit model of a laser array is established,and simulated processes are imposed on the model using PSPICE. The simulated and experimental results indicate that the ideality factor of the laser array is equal to that of its elements,and the current leakage and abnormal ideality factor variation of elements can result in the increase of the ideality factor of the laser array. We propose a new method to detect the ideality factor of a laser array element by using an electrical derivative test of the laser array,and we also propose the use of the ideality factor of a laser array as a screen to estimate the reliability the array.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第5期768-773,共6页 半导体学报(英文版)
基金 国家自然科学基金(批准号:60471009) 吉林省重大科技发展计划(批准号:2004030014)资助项目~~
关键词 激光器阵列 等效电路模型 电特性 可靠性 理想因子 电导数 laser array equivalent circuit model electrical characteristics reliability ideality factor electrical derivative
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参考文献11

  • 1Wright P D, Joyce W B, Craft D C. Electrical derivative characteristics of InGaAsP buried heterostructure lasers. J Appl Phys, 1982,53 : 1364
  • 2Choy M M,Barnes C E. Effective screen for fast aging InGaAsP BH lasers using electrical derivatives. Electron Lett, 1985,21 : 846
  • 3Shi J W,Jin E S, Gao D S. The junction voltage saturation and reliability of semiconductor lasers. Opt Quantum Electron,1992,24:775
  • 4Shi J W,Jin E S,Ma J,et al. b and its temperature dependence are the important criteria of the reliability of semiconductor lasers. Microelectron Reliab, 1994,34 : 1405
  • 5Shi J W,Jin E S, Li H Y, et al. The characteristic junction of a semiconductor laser and its relation with reliability. Opt Quantum Electron,1996,28:647
  • 6Li H Y,Qi L Y,Shi J W,et al.Effective method for evaluation of semiconductor laser quality. Microelectron Reliab, 2000,40:333
  • 7Qi L Y,Shi J W,Li H Y,et al. The peaks in the electric derivative curves and optic derivative curves of GaAs/GaAIAs high-power QW lasers. Microelectron Reliab, 2000,40:2123
  • 8Deshayes Y,Bechou L, Mendizabal L,et al. Early failure signatures of 1310nm laser modules using electrical,optical and spectral measurements. Measurement, 2003,34:157
  • 9丛红侠,冯列峰,王军,朱传云,王存达,谢雪松,吕长志.激光二极管正向电特性的精确检测[J].Journal of Semiconductors,2006,27(1):105-109. 被引量:6
  • 10石家纬,金恩顺,李红岩,李正庭,郭树旭,高鼎三,余金中,郭良.一个检测半导体激光器质量的有效方法[J].Journal of Semiconductors,1996,17(8):595-600. 被引量:6

二级参考文献5

  • 1石家纬,Microelectron Reliab,1994年,34卷,76期,1405页
  • 2石家纬,Optical and Quantum Electronics,1992年,24卷,775页
  • 3石家纬,吉林大学自然科学学报,1985年,2期,60页
  • 4金恩顺,半导体技术,1984年,1期,24页
  • 5沈君,王存达,杨志坚,秦志新,童玉珍,张国义,李月霞,李国华.GaN发光二极管的负电容现象[J].发光学报,2000,21(4):338-341. 被引量:4

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