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一种具有“8悬臂梁-质量块”结构的新型硅微加速度计 被引量:1

Design and Fabrication of an Accelerometer with Novel “8-Beams/Mass” Structure
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摘要 提出了一种具有“8悬臂梁-质量块”结构的新型三明治式硅微机械电容式加速度计,用微机械加工工艺在(111)硅片上制作出了具有信号输出的器件.该加速度计的惯性质量块由同一(111)硅片上下表面对称分布的8根悬臂梁支撑.这些悬臂梁是利用(111)硅在KOH溶液中的各向异性腐蚀特性结合深反应离子刻蚀(DRIE)实现的,其尺度精确可控,保证了结构的对称性.该加速度计的谐振频率为2·08kHz,品质因子Q为21·4,灵敏度为93·7mV/g. A new micro-silicon capacitive accelerometer with novel "8-beams/mass" structure was designed and fabricated by applying a micro-machining process to (111) silicon wafer. The proof mass of this accelerometer is supported by eight suspension beams located symmetrically on the top/bottom surface of a (111) silicon wafer. By using an extremely slow rate of Si (111) plane etching in anisotropic KOH,along with DRIE and other MEMS processes,the dimension of these beams can be accurately controlled,and the symmetry of the "8-beams/mass" structure can be achieved. The performance of the accelerometer is measured with a typical resonance frequency of 2. 08kHz,quality factor of 21.4,and sensitivity of 93. 7mV/g.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第5期783-788,共6页 半导体学报(英文版)
基金 国家高技术研究发展计划资助项目(批准号:2006AA04Z312)~~
关键词 微加速度计 微机械加工 各向异性腐蚀 accelerometer MEMS anisotropic etching
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参考文献9

  • 1Chen Weiping, Huo Mingxue, Lin Yumin, et al. A novel z-axis capacitive accelerometer using sog structure. IEEE 6th International Conference on Electronic Packaging Technology, 2005
  • 2单光宝,阮晓明,姚军,耿增建.悬臂梁式硅微加速度计的研制[J].电子元件与材料,2005,24(5):17-20. 被引量:2
  • 3Erickson R K. Method for fabricating suspension members for micromachined sensors. United States Patent, No. 5484073,1996
  • 4Yazdi N, Najafi K. All-silicon single-wafer micro-g accelerometer with a combined surface and bulk micromachining process. J Microelectromechan Syst,2000,9 (4) : 544
  • 5Lee S, Park S, Cho D I. The surface/bulk micromachining (SBM) process: a new method for fabricating released MEMS in single crystal silicon. J Microelectromechan Syst, 1999,8(4):409
  • 6吉训生,王寿荣.电容式硅微机械加速度计系统的特性研究[J].宇航学报,2005,26(4):446-449. 被引量:10
  • 7Bao Minhang. Analysis and design principles of MEMS devices. Elsevier, 2005: 92
  • 8Kim J,Cho D I,Muller R S. Why is (111) silicon a better mechanical material for MEMS. Transducers,2001:662
  • 9Jiang Tao, Wang Anlin,Jiao Jiwei, et al. Detection capacitance analysis method for tuning fork micromachined gyroscope based on elastic body model. Sensors and Actuators A, 2006,128:52

二级参考文献13

  • 1Thomson W T. and Dahleh M D. Theory of Vibration with Application[M]. Prentice Hall, 1998, 55 - 93.
  • 2Yang J. Squeeze-film damping for MEMS structures, M S. Dissertation. Massachusetts of the Technology, Cabfidge, 1998, 12- 52.
  • 3Pallas-Areny R and Webster J G, Sensors and Signal Conditioning. J Wiley, 2001, 112- 180.
  • 4Gabrileson T. Mechanical-thermal noise in nficro-machined acoustic and vibration sensors [ J ]. IEEE Transactions Electron Devices,1993, 40:903- 909.
  • 5Roylance L M. Miniature integrated circuit accelerometer for biomedical applications [D]. Stanford, CA: Stanford Univ, 1978.
  • 6Yazdi N, Ayazi F, Najsfi K. Micromichined inertial Sensors [J]. Proc IEEE, 1998, 86(8): 1640-1659.
  • 7Kim K H, Ko J S, Cho Y H, et al. A skew-symmetric cantilever accelerometer for automotive airbag applications [J]. Sens Actuat A, 1995, 50: 121-126.
  • 8Nemirovsky Y, Nemirovsky A, Muralt P, et al. Design of a novel thin piezoelectric accelerometer [J]. Sens Actuat A, 1996, 56: 239-249.
  • 9Kubena R L, Atkinson G M, Robinson W P, et al. A new miniaturized surface nicromachined tunneling accelerometer [J]. IEEE Electron Device lett, 1996, 17(6): 306-308.
  • 10Dauderstadt U A, Vries P H S de, Hiratsuka R, et al. Silicon accelerometer based on thermopiles [J]. Sens Actuat A, 1995, 46-47: 201-204.

共引文献10

同被引文献7

  • 1Yang Z,Wang C,Yan G,et al. A bulk micromachined lateral axis gyroscope with vertical sensing comb capacitors. Solid- State Sensors, Actuators and Microsystems, Transducers, 2005:121
  • 2Kim J, Park S, Kwak D,et al. An x-axis single-crystalline microgyroscope fabricated by the extended SBM process. J Microelectromech Syst, 2005,14:444
  • 3Lee B, Lee S, Jung K, et al. A decoupled vibratory gyro-scope using a mixed micro-machining technology. Proc ICRA, Seoul,2001:3412
  • 4Yazdi N,Najafi K. An all-silicon single-wafer micro-g accelerometer with a combined surface and bulk micromachining process. J Microelectromech Syst, 2000,9 (4) : 544
  • 5Bao M, Yang H, Sun Y, et al.Modified Reynolds' equation and analytical analysis of squeeze-film air damping of perfora ted structures. J Micromech Microeng, 2003,13 :795
  • 6Kim J,Cho D I,Muller R S, Why is (111) silicon a better mechanical material for MEMS. Transducers' 01 Eurosensots XV, Int Conf Solid-State Sens Actuators, Munich, 2001 : 662
  • 7Chen Y, Jiao J, Wang H, et al. A novel tuning fork gyroscope with high Q-factors working at atmospheric pressure. Microsystem Technologies,2005,11(23) :111

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