碲铟汞晶体的生长研究

Crystal Growth of Mercury Indium Telluride

以高纯Hg、In、Te单质为原料,在摇摆合料炉中成功地合成了HgInTe多晶原料,并且利用该多晶原料,在特殊设计的坩埚中,成功地生长了HgInTe单晶体。X射线衍射分析证明,所生长的HgInTe晶体为缺陷闪锌矿结构,晶格常数a=0.6293nm,是一种高质量的完整单晶体。

A single-phase HgInTe polycrystal has been synthesized directly from the high purity elements of Hg, In and Te in a rocking furnace. With the polycrystal materials, HgInTe single crystal has been successfully grown by vertical Bridgman method （VB）. The results of X-ray diffraction analysis confirm that the as-grown crystal is single-phase of zinc-blende structure with lattice constant of α = 0. 6293nm and has good quality.