X光电子能谱研究氧离子束辅助PLD共淀积ZnO薄膜

Study of X-ray Electron Spectroscopy on ZnO Film Deposited by PLD with Assisted Oxygen Ion Beam

在ZnO的XPS分析中,ZnLMM俄歇峰能很好地指认氧化锌淀积膜中Zn的价态,结合O1s光电子峰的分析,可表征ZnO中缺氧程度。通过XPS的对比实验,表明采用氧(O)离子辅助PLD共淀积ZnO薄膜,能明显改善淀积ZnO膜的缺氧问题,降低薄膜层中的孔隙率,提高淀积ZnO薄膜质量。XPS深度剖析结果还表明采用O离子辅助PLD共淀积后膜层中Zn的氧化组分和孔隙率随深度变化平缓。

In XPS measurements, Zn chemical states in ZnO films can be identified clearly by Auger peaks ZnLMMs, as well as the extents of shortage of oxygen were determined by the combination with analysis of Ols peaks. Several XPS measurements were conducted in the study, and the results reveal that the shortage of oxygen in deposited films was partly solved using pulsed laser deposition （PLD） with the assisted oxygen ion beams, and the pore densities in the films decreased. Therefore, the quality of the ZnO films is better than before using assisted oxygen ion beams. The XPS depth profiles also show that the components of Zn chemical state and pore density distributed well in the ZnO layers when using PLD with the assisted oxygen ion beams.