退火对PECVD制备的掺磷硅薄膜及其电阻温度系数影响的研究

Influence of Annealing on TCR of Phosphor-doped Amorphous Silicon by PECVD

本文对采用PECVD技术制备的不同掺杂比掺磷硅薄膜在不同退火时间和温度下的结构和电阻温度系数进行了研究。拉曼散射光谱结果表明:未退火样品主要为非晶/微晶混合相;当退火温度从500℃上升到700℃,薄膜结构呈现出先向非晶相转变,后完全晶化的趋势,与此同时,电阻率和电阻温度系数随掺杂浓度及退火温度的增加而单调减小。文中我们采用Lu的模型对上述实验结果进行了解释,认为由Si-P键构成的晶界势垒高度的变化是上述实验结果的根本原因。

In this paper, the microstructure and temperature coefficient resistance （TCR） of hydrogenated amorphous silicon with different phosphor doping concentration fabricated by PECVD were investigated after it was annealed at different temperature and time. Raman scattering spectrum indicated that there are the mixture of amorphous as well as the micro-crystalline in the as-grown sample. When annealing temperature increased from 500℃ to 700℃, the structure showed the tendency to amorphous phase first and then to complete crystallization. While, the resistivity and the temperature coefficient resistance keep on decreasing. The Lu % model had been employed to explain the phenomena and the results which showed that the variation of the potential energy at the crystalline border caused by Si-P bonds is the fundamental reason.