摘要
采用直流反应磁控溅射法淀积ZrN薄膜发现在（100）晶向硅片上ZrN薄膜按（111）晶向生长，控制生长工艺可以获得ZrN（111）晶向的外延生长膜．
ZrN films were deposited by reactive magnetron sputtering.The crystalline quality of ZrN films was investigated by X-ray diffraction. The results indicated the growth of zirconium nitride had the(l I l) orientation priority. Controlling the growth conditions,a (111) oriented epitaxial ZrN film could be obtained. The chemical properties and thermal stability were also investigated.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
1997年第2期207-208,共2页
Chinese Journal of Materials Research
基金
国家自然科学基金!59571047
关键词
薄膜
反应磁控溅射
外延生长
氮化锆
Zirconium nitride film DC reactive magnetron sputtering epitaxial growth film resistance material
