淀积条件对GD_(a)-SiN_(x)薄膜电学特性的影响

本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件，制备了优质非晶氮化硅薄膜，其介电常数为７．５、击穿强度为５．５ＭＶ／ｃｍ、电导率为１０－１３（Ωｃｍ）－１。

In this paper, the effects of the growth conditions such as temperature、 RF power and the scale of the reaction gases on dielectric constant 、 breakdown strength and conductivity of a- SiN x  grown by the method of glow-discharged are discussed By optimizing the growth conditions, we get good quality  SiN x  film which dielectric constant, breakdown strength and conductivity are 7 5, 5 5 MV/cm and 10 -13 (Ω cm) -1 respectively