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三维寄生电阻电容直接边界元计算 被引量:1

DIRECT BOUNDARY ELEMENT METHOD FOR 3 D PARASITIC RESISTANCE AND CAPACITANCE CALCULATION
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摘要 应用直接边界元素法求解表征寄生电阻电容的混合边界条件拉普拉斯方程,处理角点法向电场间断是一个难点。作者曾提出多重法向导数方法处理2D角点问题,取得良好效果[2,4]。本文详细介绍多重法向导数方法在3D情形的推广。 The parasitic resistance and capacitance can be characterized by the Laplace equation with combined boundary conditions and it can be solved by using the direct Boundary Element Method(BEM).But, it is difficult to treat the discontinuity of normal electric field at corners. The first author of this paper has ever applied a ocncept of multiple normal derivatives at a corner to hadle 2 D problems, and it works efficiently 2,4 . This paper extends the concept to 3 D simulation. Some numerical examples are presented.
出处 《计算物理》 CSCD 北大核心 1997年第2期238-242,共5页 Chinese Journal of Computational Physics
基金 国家自然科学基金
关键词 寄生电阻电容 边界元 线性元 集成电路 Parasitic resistance & capacitance Direct boundary element method Linear element Multiple normal derivatives.
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参考文献6

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同被引文献11

  • 1侯劲松,王泽毅,周春玲.二维任意形状寄生电阻电容的边界元计算[J].计算机辅助设计与图形学学报,1996,8(3):215-221. 被引量:2
  • 2TERASAVA T.Subwavelength lithography (PSM,OPC)[C].Proc:ASP-DAC 2000,2000,295-300.
  • 3LIU Y.Computer-aided phase shift mask design with reduced complexity[J].IEEE Trans Semiconductor Manufacturing,1996,9(2):170-181.
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  • 9侯劲松,王泽毅.边界元计算中一种新的积分方法[J].数值计算与计算机应用,1999,20(1):21-27. 被引量:5
  • 10石瑞英,郭永康.光学邻近校正改善亚微米光刻图形质量[J].半导体技术,2001,26(3):20-26. 被引量:5

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