摘要
本文讨论了在ZnSe薄膜材料及ZnSe-ZnS多量子阱中宽阱材料和窄阱材料的激子弛豫过程和在窄阱材料中激子受激发射
This paper discusses the relaxation processes of exciton in ZnSe thin film and mul tiple quantum wells (MQWs) and the stimulated emission of exciton in narrow well of MQWs. The nonradiative processes of exciton is the leading facter in the ZnSe thin film. The nonradiative relaxation processes were checked in MQWs. The check effectiveness increases with decreasing well width. The stimulated emission have been acquired easily in low dimension material.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1997年第1期23-27,共5页
Chinese Journal of Luminescence
基金
国家自然科学基金
关键词
量子阱
激子
弛豫过程
受激发射
半导体
quantum well, exciton, relaxation processe, stimulated emission