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ZnSe-ZnS多量子阱中激子动力学及受激发射

EXCITON DYNAMIC AND STIMULATED EMISSION IN ZnSe ZnS MQWs
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摘要 本文讨论了在ZnSe薄膜材料及ZnSe-ZnS多量子阱中宽阱材料和窄阱材料的激子弛豫过程和在窄阱材料中激子受激发射 This paper discusses the relaxation processes of exciton in ZnSe thin film and mul tiple quantum wells (MQWs) and the stimulated emission of exciton in narrow well of MQWs. The nonradiative processes of exciton is the leading facter in the ZnSe thin film. The nonradiative relaxation processes were checked in MQWs. The check effectiveness increases with decreasing well width. The stimulated emission have been acquired easily in low dimension material.
出处 《发光学报》 EI CAS CSCD 北大核心 1997年第1期23-27,共5页 Chinese Journal of Luminescence
基金 国家自然科学基金
关键词 量子阱 激子 弛豫过程 受激发射 半导体 quantum well, exciton, relaxation processe, stimulated emission
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