摘要
ＺｎＳｅ０．９３Ｔｅ０．０７┐ＺｎＳｅ多量子阱的光泵受激发射＊于广友范希武张吉英杨宝均赵晓薇申德振（中国科学院长春物理研究所，长春１３００２１）（中国科学院激发态物理开放研究实验室，长春１３００２１）关键词Ⅱ－Ⅳ族化合物，多量子阱，受激发射宽带Ⅱ－Ⅵ...
The 50 periods ZnSe 0.93 Te 0.07 (4 nm) ZnSe(15 nm) multiple quantum wells(MQWs) were grown on (100) GaAs substrate by LP MOCVD at 450 ℃. Multiple order satellite peaks in X ray diffraction spectrum showed the high quality of the MQWs structure. In the PL spectra, stimulated emission was found and we attributed this emission to the selftrapping effect of exciton in type Ⅱ MQWs.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1997年第1期81-83,共3页
Chinese Journal of Luminescence
基金
国家自然基金
