外腔式可调谐半导体激光器的光谱法求解

Studying External Cavity Tunable Semiconductor Laser Via Spectrum Analysis

利用由射线法求得的光谱表达式，分析了外腔式半导体激光器（ＥＣＬＤ）的输出谱，并以此求得了普遍情况下阈值载流子密度的解析表达式。结合光谱表达式与载流子速率方程，求得了不同电流下腔内载流子密度与阈值的差值，从而可以不必诉诸光子数速率方程而获得外腔式半导体激光器的自洽解。

Using the expression of output spectrum derived from the ray trace method, the spectral characteristics of the external cavity semiconductor laser (ECLD) have been analysed. Based on this, the analytical expression of the threshold carrier density applicable to any selected wavelength for the ECLD has been deduced. Combining the spectrum and the carrier rate equation, the carrier deficit from the threshold can be obtained self consistently and the output can be determined without resorting to the photon rate equation.