能谷间相互作用对量子阱Ge_(0.3)Si_(0.7)/Si/Ge_(0.3)Si_(0.7)的电子能带结构的影响

THE EFFECTS OF INTERVALLEY INTERACTIONS ON THE ELECTRONIC STRUCTURES IN QUANTUM WELLS

采用建立在经验赝势理论基础上的推广ｋ·ｐ方法及电流密度算符技术，计算了生长在Ｇｅ０３Ｓｉ０７（００１）衬底上的量子阱Ｇｅ０３Ｓｉ０７／Ｓｉ／Ｇｅ０３Ｓｉ０７的导带电子束缚能级．详细地研究了因能谷间相互作用而引起的能级分裂情况。

Using the generalized k·p method based on empirical pseudopotential theory associated with boundary conditions of current density operator,the electronic bound levels are calculated for quantum wells Ge 0.3 Si 0.7 /Si/Ge 0.3 Si 0.7 grown on Ge 0.3 Si 0.7 (001).The energy level splitting by intervalley interactions is studied in detail and the dispersions of electronic bound levels in the well plane are also discussed.