摘要
通过对表面原子/分子氧化去除动态平衡模型的分析,应用概率统计方法推导了单个磨粒的多分子层薄膜的非连续去除模型,该模型考虑了化学机械抛光(CMP)中化学作用与机械作用的协调性,同时考虑了芯片新鲜表面的直接去除和多层氧化薄膜的去除。在特定条件下,应用图形分析法找到了化学作用与机械作用协调的半经验公式。研究结果表明:材料去除率与去除层数呈指数关系;一直增加化学作用并不能增大材料去除率;机械化学协调作用时,去除率始终保持极值去除。模型预测结果和试验结果相吻合。
Based on the analysis of atom/molecule dynamical removal mechanism, the present study proposed a non-continuum statistic model for chemical mechanical polishing（CMP） material removal rate by a slurry particle, which considered the chemical-mechanical synergetic effects, the direct removal rate of the un-reacted surface and multi-molecular layers of the reacted surface. Under specific conditions, a semi-empirical model was derived from the analysis of the graph. The non -linear multi-layer removal rate relation was observed in the current model. It is shown that higher chemical effects will not lead to a proportional increase of the removal rate. As chemical-mechanical synergetic effects are optimal, the removal rate is extremum. The predicted material removal rates follow trends similar to those shown by the experimental observations published previously.
出处
《中国机械工程》
EI
CAS
CSCD
北大核心
2007年第9期1032-1035,共4页
China Mechanical Engineering
基金
江苏省自然科学基金资助项目(BK2004020)
教育部回国人员启动基金资助项目([2004]527)
清华大学摩擦学国家重点实验室开放基金资助项目(SKLT04-06)
关键词
化学机械抛光
协调效应
非连续
模型
chemical mechanical polishing
synergetic effect
non-continuum
model
