静电放电引起2SC3356潜在失效的研究

Latent failure of 2SC3356 caused by electrostatic discharge

研究了低电压的人体模型(HBM)静电放电(ESD)对微电子器件造成的潜在失效。分别从CB结和EB结对2SC3356晶体管施加低电压HBM的ESD应力,结果表明:从CB结施加低电压的ESD电应力,所产生的潜在失效的几率要高于从EB结施加低电压的ESD电应力产生的潜在失效几率,即CB结比EB结对低电压的ESD应力引入的潜在失效更为敏感。高温(≥125℃)寿命实验有退火效应,从而缓解了低电压的ESD应力使器件产生的潜在损伤,使静电放电过程中引入的潜在损伤自恢复。

Latent failure study on the low-level human body model（HBM） electrostatic discharge（ESD） stresses on microelectric device was presented. The low-level ESD stresses were imposed on microwave low noise transistor 2SC3356 using the HBM from CB （collector-base） junctions and EB （emitter-base） junctions. It is shown that the CB junctions are more sensitive than the EB junctions, of the latent failure on 2SC3356 caused by low-level ESD and that high temperature （≥125 ℃） life tests bring about annealing effects and relief the latent defects caused by low-level ESD stresses.