GaN体单晶生长技术研究现状

Development Status of Bulk GaN Single Crystal Growth Techniques

回顾了GaN体单晶材料的发展历程并介绍了研究现状。主要讨论了HVPE法和气相传输法等气相生长方法,以及HNPSG、助溶荆法、氨热法、提拉法等熔体生长方法。针对每种生长方法,阐述了其生长原理、特点及研究现状。

The history and the present research progress of GaN bulk crystal techniques were reviewed and introduced. GaN vapor phase growth techniques, such as HVPE （hydride vapor phase epitaxy） and SST （sublimation sandwich technique）, and growth methods from melt, such as HNPSG （high nitrogen pressure solution growth）, flux method, ammonothermal method and seed-pull method, were discussed. The growth theory, characters and progress for each growth technique at present were elaborated.