期刊文献+

LDMOS微波功率放大器分析与设计 被引量:4

Analysis and Design of LDMOS Microwave Power Amplifier
下载PDF
导出
摘要 在对晶体管绝对稳定性分析的基础上,根据负载牵引得到的晶体管的输入输出阻抗运用共轭匹配,成功设计出2级LDMOS微波功率放大器,P-1大于45 dBm,在1580-1650 MHz功率增益30 dB以上,PAE大于30%。同时,得到了最终的版图并且运用MOMENTUM对它进行了2.5D仿真,得到了理想的结果。 Based on the analysis of unconditional stability, a 2-stage LDMOS microwave power amplifier was successfully designed, P-1 was larger than 45 dBm, power gain was over 30 dB at 1580- 1650 MHz, and PAE was over 30%, according to the load-pull result of the input and output impedance by the conjugate match.The layout was gained and it was simulated by 2.5D MOMENTUM, the result is perfect.
出处 《半导体技术》 CAS CSCD 北大核心 2007年第2期158-161,共4页 Semiconductor Technology
基金 陕西省发展基金项目(Y20050608)
关键词 横向扩散金属氧化物半导体 ADS软件 功率放大器 负载牵引法 共轭匹配 LDMOS ADS software power amplifier load-pull method conjugate match
  • 相关文献

参考文献5

  • 1MARK P,JOHN R G.Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation[J].IEEE Transaction on Microwave Theory and Techniques,2002,50(9):2176-2184.
  • 2CHUNG Y,JEONG J,WANG Y,et al.Power level-dependent dual-operating mode LDMOS power amplifier for CDMA wireless base-station applications[J].IEEE Transaction on Microwave Theory and Techniques,2002,53(2):739-746.
  • 3FERRERO A,PISANI U.A unified calibration algorithm for scattering and load-pull measurement[C]//IEEE Instrumentation and Measurement Technology Conference.New York.1996:1250-1253.
  • 4EDWARDS M L,SINSKY J H.A new criterion for linear 2-port stability using a single geometrically derived parameter[J].IEEE Transactions on Microwave Theory and Tech,1992,40(12):2303-2311.
  • 5GONZALEZ G.Microwave transistor amplifiers analysis and design[M].白晓东,译.北京:清华大学出版社,2003.

同被引文献24

  • 1沈剑均,李智群,王志功.适用于卫星通信的SiGe HBT集成功率放大器设计[J].中国集成电路,2007,16(9):25-29. 被引量:1
  • 2刘晨晖,张穆义,高学邦.毫米波PHEMT功率单片集成电路研究[J].半导体技术,2006,31(3):194-198. 被引量:1
  • 3Awan D A. A Medium Power Two-Stage Balanced Amplifier with 21.7 dB Gain for S-Band Telemetry [ C ]//Proceedings of International Bhurban Conference on Applied Sciences & Technology,2009.
  • 4Liao S. Microwave Devices and Circuits[ M ]. Prentice-Hall 1990; 3ed:154-156.
  • 5Chong T,Rendava S. Design and Performance of a 1.6-2.2 GHz Low-Noise, High Gain Dual Amplifier in GaAs E-pHEMT [ C ]// Microwave Conference Proceedings ,2005. APMC2005. Asia-Pacific Conference Proceedings, Volume,2005,4 (3) :4-7.
  • 6Gonzalez G. Microwave Tansistor Amplifiers analysis and design, Second ed [ M ]. Prentice-Hall, 1996:348-432.
  • 7Jongsik Lira. A Balanced Power Amplifier Utilizing the Reflected Input Power [ C ]//IEEE International Symposium on Radio- Frequency Integration Technology ,2009:88-91.
  • 8Cripps S C. RF Power Amplifier Wireless Communication [ M ]. Artech House, 1999.
  • 9Pozar D M. Microwave Engineering [ M ]. 2nd ed. New York : Wiley, 1998:570-573.
  • 10COLOMB Francois Y,PLATZKER Aryeh. 2 and 4 Watt Kaband GaAs PHEMT power amplifier MMICs[J].IEEE MTT-S International Microwave Symposium Digest,2003,(05):843-846.

引证文献4

二级引证文献12

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部