激光脉冲外延生长Pb(Zr_(0.52)Ti_(0.48))O_3薄膜及其特性研究

Study on pulsed laser hetero-epitaxial growth and properties of Pb(Zr_(0.52)Ti_(0.48))O_3 film

利用激光脉冲法在LaAlO3衬底上沉积制备LaNiO3薄膜作为底电极并外延生长(100)Pb(Zr0.52Ti0.48)O3铁电薄膜,系统研究了生长温度对PZT外延结构和电学特性的影响。研究发现当生长温度高于550℃时即可得到外延(100)PZT薄膜。在对所制备的PZT薄膜的结构和性能测试表明,650℃下生长的PZT薄膜外延性最佳,并且表现出优异的介电和铁电性能,介电常数ε、剩余极化Pr和矫顽场Ec分别为900、26.5μC/cm2和52.1kV/cm。试验还证实这种外延PZT薄膜具有优良的抗疲劳特性,可用于铁电存储器的制备中去。

LaNiO3 （LNO） film as bottom electrode and （100） Pb（Zr0.52Ti0.48）O3 （PZT） film have been deposited by pulsed laser deposition on LaAlO3 substrates sequentially. Microstructure, surface topography and ferroelectric domain structure of PZT layers were systematically investigated. （100） PZT thin films can be hetero-epitax ially grown at temperature as low as 550℃. The C-V and P-E curves measurements showed that the PZT film hetero-epitaxially grown at 650℃ had good dielectric and ferroelectric properties. The ε, Pt and Ec were 900, 26.5/iC/cm^2 and 52. 1kV/cm, respectively. The experiment also proved that the hetero-epitaxial PZT film has perfect anti-fatigue properties, so it is expected to be widely applied in FRAM fabrication.