超大规模集成电路铜布线扩散阻挡层TaN薄膜的制备研究

Research on preparation of TaN diffusion barrier layer in ULSI(ultra large scale integration)Cu-metallization

利用高真空磁控溅射镀膜的方法制备了超大规模集成电路铜布线的扩散阻挡层TaN薄膜,讨论了实验条件温度、功率和氩气与氮气气流量比对TaN薄膜的生长动力学和表面形貌结构的影响,得到较好的制备TaN薄膜的实验参数。

TaN harrier layer were prepared with using high vacuum magtreon sputtering method for ULSI Cu metallization. It was disscused that Experiments parameters such as temperature power and flowing ratio of argon to nitrogen effects on growth dynamics and surface microstructure. Good experiments conditions was given to get better TaN barrier film.