摘要
介绍了以栅宽1.2mm GaAs FET 器件为基础的两级 GaAs 功率单片集成电路的设计、制作及其性能。该两级单片集成电路在10～11GHz 频带内,输出功率1W,增益10dB。
In this paper design,fabrication and performance of two-stage power mono- lithic ICs based on GaAs FET device with 1.2mm gate width are described.The two- stage MMIC provides lW of output power and 10dB of gain at 10～11GHz band.
出处
《半导体情报》
1997年第1期32-35,共4页
Semiconductor Information
关键词
砷化镓
单片集成电路
设计
GaAs
Monolithic IC
Design
Fabrication
