摘要
介绍了2～18GHz GaAs 微波低噪声宽带单片放大器设计原理及主要研究工作。给出了主要研究结果:在2～18GHz 频率范围内,管壳封装的两级级联放大器的增益 G_a=13.5～18.3dB,噪声系数 F_n=4.2～6.2dB,输入电压驻波比 VSWR_(in)<2.0,输出电压驻波比 VSWR_(out)<2.5。
The design principle and research process of 2 to 18GHz GaAs microwave low noise ultra-broadband monolithic amplifier is described in this paper.Its final results are presented,in 2 to 18GHz frequency range,the noise figure is 4.2～6.2dB,the gain is 13.5～18.3dB,input VSWR is less than 2.0,output VSWR is less than 2.5 for a packaged two stage amplifier.
出处
《半导体情报》
1997年第1期36-38,共3页
Semiconductor Information
